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2SC4738 fiches techniques PDF

Toshiba Semiconductor - Silicon NPN Epitaxial Type TRANSISTOR

Numéro de référence 2SC4738
Description Silicon NPN Epitaxial Type TRANSISTOR
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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2SC4738 fiche technique
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4738
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
= 0.95 (typ.)
High hFE: hFE = 120~700
Complementary to 2SA1832
Small package
2SC4738
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 150 mA
Base current
IB 30 mA
Collector power dissipation
PC 100 mW
Junction temperature
Storage temperature range
Tj 125 °C
Tstg
55~125
°C
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
temperature/current/voltage and the significant change in
TOSHIBA
2-2H1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 2.4 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 60 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE
(Note)
VCE = 6 V, IC = 2 mA
VCE (sat) IC = 100 mA, IB = 10 mA
fT VCE = 10 V, IC = 1 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
⎯ ⎯ 0.1 μA
⎯ ⎯ 0.1 μA
120 700
0.1 0.25 V
80 ⎯ ⎯ MHz
2.0 3.5 pF
Note: hFE classification Y (Y): 120~240, GR (G): 200~400, BL (L): 350~700
( ) marking symbol
Marking
1 2007-11-01

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