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2SC4725 fiches techniques PDF

ROHM Semiconductor - High-Frequency Amplifier Transistor (18V/ 50mA/ 1.5GHz)

Numéro de référence 2SC4725
Description High-Frequency Amplifier Transistor (18V/ 50mA/ 1.5GHz)
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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2SC4725 fiche technique
Transistors
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K
High-Frequency Amplifier Transistor
(18V, 50mA, 1.5GHz)
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K
!Features
1) High transition frequency. (Typ. fT = 1.5GHz)
2) Small rbb’Cc and high gain. (Typ. 6ps)
3) Small NF.
! Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SC5661, 2SC4725
2SC4082, 2SC3837K
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
30
18
3
50
0.15
0.2
150
55~+150
Unit
V
V
V
mA
W
°C
°C
!Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit
(pieces)
2SC5661
VMT3
NP
AC
T2L
8000
2SC4725
EMT3
NP
AC
TL
3000
2SC4082
UMT3
NP
1C
T106
3000
Denotes hFE
2SC3837K
SMT3
NP
AC
T146
3000
!External dimensions (Units : mm)
2SC5661
1.2
0.2 0.8 0.2
(2)
(3)
(1)
ROHM : VMT3
2SC4725
ROHM : EMT3
EIAJ : SC-75A
2SC4082
0.15Max.
(1)
(3) (2)
0.8
1.6
0.1Min.
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
2SC3837K
1.25
2.1
0.1to0.4
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
1.6
2.8 (1) Emitter
(2) Base
(3) Collector
0.3to0.6
Each lead has same dimensions
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Collector-base time constant
Noise factor
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
rbb'·Cc
NF
Min.
30
18
3
56
600
Typ.
1500
0.9
6
4.5
Max.
0.5
0.5
0.5
180
1.5
13
Unit
V
V
V
µA
µA
V
MHz
pF
ps
dB
Conditions
IC = 10µA
IC = 1mA
IE = 10µA
VCB = 10V
VEB = 2V
IC/IB = 20mA/4mA
VCE/IC = 10V/10mA
VCB = 10V , IC = 10mA , f = 200MHz
VCB = 10V , IE = 0A , f = 1MHz
VCB = 10V , IC = 10mA , f = 31.8MHz
VCE = 12V , IC = 2mA , f = 200MHz , Rg = 50
1/1

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