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PDF 2SC4715 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4715 | |
| Descripción | Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC4715 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Transistor
2SC4715
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
s Features
q Satisfactory linearity of forward current transfer ratio hFE.
q High collector to emitter voltage VCEO.
q Small collector output capacitance Cob.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
150
150
5
100
50
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
4.0±0.2
Unit: mm
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
ICBO
VCEO
VEBO
hFE*1
VCB = 100V, IE = 0
IC = 100µA, IB = 0
IE = 10µA, IC = 0
VCE = 5V, IC = 10mA
1 µA
150 V
5V
130 330
Collector to emitter saturation voltage VCE(sat)
IC = 30mA, IB = 3mA
1V
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
3 pF
Transition frequency
fT VCB = 10V, IE = –10mA, f = 200MHz
160 MHz
Noise voltage
VCE = 10V, IC = 1mA, GV = 80dB
NV
Rg = 100kΩ, Function = FLAT
150 mV
*1hFE Rank classification
Rank
R
S
hFE 130 ~ 220 185 ~ 330
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC4715.PDF ] | |
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