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Número de pieza | 2SC4695 | |
Descripción | NPN Epitaxial Planar Silicon Transistor | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC4695 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Ordering number:EN3486
NPN Epitaxial Planar Silicon Transistor
2SC4695
Low-Frequency General-Purpose Amplifier,
Muting Applications
Features
· Adoption of FBET process.
· High DC current gain.
· High VEBO (VEBO≥25V).
· High reverse hFE (150 typ).
· Small ON resistance [Ron=1Ω (IB=5mA)].
· Very small-sized package permitting 2SC4695-
applied sets to be made small and slim.
Package Dimensions
unit:mm
2018B
[2SC4695]
0.4
3
0.16
0 to 0.1
1 0.95 0.95 2
1.9
2.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Marking :WT
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCB=40V, IE=0
VEB=20V, IC=0
VCE=5V, IC=10mA
VCE=10V, IC=10mA
VCB=10V, f=1MHz
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
Ratings
50
20
25
500
800
100
250
150
–55 to +150
Unit
V
V
V
mA
mA
mA
mW
˚C
˚C
Ratings
min typ
300
250
3.6
max
0.1
0.1
1200
Unit
µA
µA
MHz
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12099HA (KT)/7190MH, TA (KOTO) No.3486–1/4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2SC4695.PDF ] |
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