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2SC4690 fiches techniques PDF

Toshiba Semiconductor - Silicon NPN Triple Diffused Type TRANSISTOR

Numéro de référence 2SC4690
Description Silicon NPN Triple Diffused Type TRANSISTOR
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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2SC4690 fiche technique
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC4690
Power Amplifier Applications
2SC4690
Unit: mm
High breakdown voltage: VCEO = 140 V (min)
Complementary to 2SA1805
Suitable for use in 70-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 140 V
Collector-emitter voltage
VCEO 140 V
Emitter-base voltage
VEBO 5 V
Collector current
DC
IC
10
A
Pulse ICP 20
Base current
IB 1 A
Collector power dissipation
(Tc = 25°C)
PC
80 W
JEDEC
JEITA
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10

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