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PDF 2SC4688 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4688 | |
| Descripción | NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC4688
Power Amplifier Applications
2SC4688
Unit: mm
• Complementary to 2SA1803
• Suitable for use in 40-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 80 V
Collector-emitter voltage
VCEO 80 V
Emitter-base voltage
VEBO 5 V
Collector current
DC
IC
6
A
Pulse ICP 12
Base current
IB 0.6 A
Collector power dissipation
(Tc = 25°C)
PC 55 W
JEDEC
―
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA
TOSHIBA
―
2-16F1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 5.8 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
http://store.iiic.cc/
2006-11-10
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC4688.PDF ] | |
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