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PDF 2SC4655 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4655 | |
| Descripción | Silicon NPN epitaxial planer type(For high-frequency amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SC4655
Silicon NPN epitaxial planer type
For high-frequency amplification
s Features
q Optimum for RF amplification, oscillation, mixing, and IF of FM/
AM radios.
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
30
20
5
30
125
125
–55 ~ +125
Unit
V
V
V
mA
mW
˚C
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : K
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector to base voltage
VCBO
IC = 10µA, IE = 0
30
V
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
20
V
Emitter to base voltage
Forward current transfer ratio
VEBO
hFE*
IE = 10µA, IC = 0
VCE = 10V, IC = 1mA
5V
70 250
Transition frequency
fT
VCB = 10V, IE = –1mA, f = 200MHz 150
230
MHz
Common emitter reverse transfer capacitance Cre
VCE = 10V, IC = 1mA, f = 10.7MHz
1.3
pF
*hFE Rank classification
Rank
hFE
Marking Symbol
B
70 ~ 160
KB
C
110 ~ 250
KC
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC4655.PDF ] | |
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