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2SC4645 fiches techniques PDF

Sanyo Semicon Device - NPN Triple Diffused Planar Silicon Transistor

Numéro de référence 2SC4645
Description NPN Triple Diffused Planar Silicon Transistor
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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2SC4645 fiche technique
Ordering number:ENN3511A
Features
· Large current capacity (IC=1A).
· High breakdown voltage (VCEO400V).
2SA1785 : PNP Epitaxial Planar Silicon Transistor
2SC4645 : NPN Triple Diffused Planar Silicon Transistor
2SA1785/2SC4645
High Voltage Driver Applications
Package Dimensions
unit:mm
2064A
[2SA1785/2SC4645]
2.5
1.45
6.9
1.0
0.9
1
0.6
0.5
23
0.45
( ) : 2SA1785
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Colletor Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
2.54
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=()300V, IE=0
Emitter Cutoff Current
IEBO VEB=()4V, IC=0
DC Current Gain
hFE VCE=()10V, IC=()100mA
Gain-Bandwidth Product
fT VCE=()10V, IC=()50mA
Output Capacitance
Cob VCB=()30V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=()200mA, IB=()20mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=()200mA, IB=()20mA
* : The 2SA1785/2SC4465 are classified by 100mA hFE as follows :
Rank
C
D
E
hFE 40 to 80 60 to 120 100 to 200
1 : Emitter
2 : Collector
2.54 3 : Base
SANYO : NMP
Ratings
(–)400
(–)400
(–)5
(–)1
(–)2
1
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ max
Unit
()1.0 µA
()1.0 µA
40* 200*
(50)70
MHz
(12)8
pF
()1.0 V
()1.0 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
93003TN (KT)/83198HA (KT)/12894TH AX-8287/5170TA (KOTO) 8-6910 No.3511–1/5

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