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Numéro de référence | 2SC4638 | ||
Description | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) | ||
Fabricant | Panasonic Semiconductor | ||
Logo | |||
1 Page
Power Transistors
2SC4638
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
800
800
500
8
10
5
3
40
2
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO
Emitter cutoff current
Collector to emitter voltage
IEBO
VCEO(sus)*
Forward current transfer ratio
hFE1
hFE2
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
Transition frequency
fT
Turn-on time
ton
Storage time
tstg
Fall time
tf
*VCEO(sus) Test circuit
50/60Hz
mercury relay
120Ω
6V
1Ω
VCB = 800V, IE = 0
VEB = 5V, IC = 0
IC = 0.2A, L = 25mH
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 3A
IC = 3A, IB = 0.6A
IC = 3A, IB = 0.6A
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 3A, IB1 = 0.6A, IB2 = – 0.6A,
VCC = 200V
X
L 25mH
Y
15V
G
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
100 µA
100 µA
500 V
15
8
1V
1.5 V
8 MHz
1.0 µs
3 µs
1.0 µs
1
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Pages | Pages 3 | ||
Télécharger | [ 2SC4638 ] |
No | Description détaillée | Fabricant |
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