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PDF 2SC4630 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4630 | |
| Descripción | High-Voltage Amp/ High-Voltage Switching Applications | |
| Fabricantes | Sanyo Semicon Device | |
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Ordering number:EN3699A
NPN Triple Diffused Planar Silicon Transistor
2SC4630
900V/100mA High-Voltage Amplifier,
High-Voltage Switching Applications
Features
· High breakdown voltage (VCEO min=900V).
· Small Cob (typical Cob=2.8pF).
· Full isolation package.
· High reliability (Adoption of HVP process).
Package Dimensions
unit:mm
2079B
[2SC4630]
10.0
3.2
4.5
2.8
0.9
1.2 0.7
0.75
1 23
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
2.55
Conditions
Parameter
wCollectwor Cutofwf Curren. t
Emitter Cutoff Current
D
a
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
t
Symbol
Conditions
a ICBO S
IEBO
hFE
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VChB=900Ve , IE=0 e
VEB=4V, IC=0
VCE=5V, IC=10mA
VCE=10V, IC=10mA
IC=20mA, IB=4mA
IC=20mA, IB=4mA
IC=1mA, IE=0
IC=1mA, RBE=∞
IE=1mA, IC=0
t
4
U
2.55
.
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI (LS)
Ratings
1500
900
5
100
300
2
150
–55 to +150
Unit
V
V
V
mA
mA
W
˚C
˚C
Ratings
min typ
net
30
6
1500
900
5
max
10
10
5
2
Unit
µA
µA
MHz
V
V
V
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11599HA (KT)/91296YK (KOTO) TA-0465 No.3699–1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC4630.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SC4630 | High-Voltage Amp/ High-Voltage Switching Applications | Sanyo Semicon Device |
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| 2SC4631 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
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