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PDF 2SC4627 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4627 | |
| Descripción | Transistors (Selection Guide by Applications and Functions) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SC4627
Silicon NPN epitaxial planer type
For high-frequency amplification
s Features
q Optimum for RF amplification of FM/AM radios.
q High transition frequency fT.
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
30
20
3
15
125
125
–55 ~ +125
Unit
V
V
V
mA
mW
˚C
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : U
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
VCBO
VEBO
hFE*
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 6V, IE = –1mA
30 V
3V
40 260
Base to emitter voltage
VBE VCB = 6V, IE = –1mA
0.72 V
Transition frequency
fT VCB = 6V, IE = –1mA, f = 200MHz 450 650
MHz
Common emitter reverse transfer capacitance Cre
VCB = 6V, IE = –1mA, f = 10.7MHz
0.8 1 pF
Power gain
PG VCB = 6V, IE = –1mA, f = 100MHz 24 dB
Noise figure
NF VCB = 6V, IE = –1mA, f = 100MHz 3.3 dB
*hFE Rank classification
Rank
hFE
Marking Symbol
B
40 ~ 110
UB
C
65 ~ 160
UC
D
100 ~ 260
UD
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC4627.PDF ] | |
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