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Panasonic Semiconductor - Transistors (Selection Guide by Applications and Functions)

Numéro de référence 2SC4626
Description Transistors (Selection Guide by Applications and Functions)
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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2SC4626 fiche technique
Transistor
2SC4626
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1790
s Features
q Optimum for RF amplification of FM/AM radios.
q High transition frequency fT.
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
30
20
5
30
125
125
–55 ~ +125
Unit
V
V
V
mA
mW
˚C
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : V
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Forward current transfer ratio
ICBO
hFE*
VCB = 10V, IE = 0
VCB = 10V, IE = –1mA
0.1 µA
70 220
Transition frequency
fT
VCB = 10V, IE = –1mA, f = 200MHz 150
250
MHz
Noise figure
Reverse transfer impedance
NF
Zrb
VCB = 10V, IE = –1mA, f = 5MHz
VCB = 10V, IE = –1mA, f = 2MHz
2.8 4 dB
22 50
Common emitter reverse transfer capacitance Cre
VCB = 10V, IE = –1mA, f = 10.7MHz
0.9 1.5 pF
*hFE Rank classification
Rank
hFE
Marking Symbol
B
70 ~ 140
VB
C
110 ~ 220
VC
1

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