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Transistor
2SC4606
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA1762
s Features
q High collector to emitter voltage VCEO.
q Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
80
V
Collector to emitter voltage VCEO
80
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1A
Collector current IC 0.5 A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
VCB = 20V, IE = 0
0.1 µA
IC = 10µA, IE = 0
80
V
IC = 100µA, IB = 0
80
V
IE = 10µA, IC = 0
5
V
VCE = 10V, IC = 150mA*2 130 330
VCE = 5V, IC = 500mA*2
50 100
IC = 300mA, IB = 30mA*2
0.2 0.4
V
IC = 300mA, IB = 30mA*2
0.85 1.2
V
VCB = 10V, IE = –50mA, f = 200MHz 120 MHz
VCB = 10V, IE = 0, f = 1MHz
11 20 pF
*2 Pulse measurement
*1hFE1 Rank classification
Rank
R
S
hFE1 130 ~ 220 185 ~ 330
1