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PDF 2SC4604 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4604 | |
| Descripción | NPN EPITAXIAL TYPE (POWER AMPLIFIER/ SWITCHING APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4604
Power Amplifier Application.
Power Switching Applications.
2SC4604
Unit: mm
• Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 1.5 A)
• High-speed switching: tstg = 0.5 µs (typ.)
• Complementary to 2SA1761
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
80
50
6
3
0.6
900
150
−55 to 150
Electrical Characteristics (Ta = 25°C)
Unit
V
V
V
A
A
mW
°C
°C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCB = 80 V, IE = 0
VEB = 6 V, IC = 0
IC = 10 mA, IE = 0
VCE = 2 V, IC = 100 mA
VCE = 2 V, IC = 2 A
IC = 1.5 A, IB = 75 mA
IC = 1.5 A, IB = 75 mA
VCE = 2 V, IC = 100 mA
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― 0.1 µA
― ― 0.1 µA
50 ― ―
V
120 ― 400
40 ― ―
― ― 0.5 V
― ― 1.2 V
― 100 ― MHz
― 20 ― pF
www.DataSheet4U.com
Switching time
Turn-on time
Storage time
Fall time
ton
20 µs
Input IB1
Output
―
0.1
―
tstg IB2
30 V
tf
IB1 = −IB2 = 75 mA, duty cycle ≤ 1%
― 0.5 ―
µs
― 0.1 ―
1 2004-07-26
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC4604.PDF ] | |
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