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2SC4541 fiches techniques PDF

Toshiba Semiconductor - Silicon NPN Epitaxial Type TRANSISTOR

Numéro de référence 2SC4541
Description Silicon NPN Epitaxial Type TRANSISTOR
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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2SC4541 fiche technique
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4541
Power Amplifier Applications
Power Switching Applications
2SC4541
Unit: mm
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A)
High speed switching time: tstg = 0.5 μs (typ.)
Small flat package
PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SA1736
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
PC
(Note 1)
Tj
Tstg
80
50
6
3
0.6
500
1000
150
55 to 150
V
V
V
A
A
mW
mW
°C
°C
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2009-12-21

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