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2SC4522 fiches techniques PDF

Sanyo Semicon Device - NPN Epitaxial Planar Silicon Transistors

Numéro de référence 2SC4522
Description NPN Epitaxial Planar Silicon Transistors
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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2SC4522 fiche technique
Ordering number:EN3141A
NPN Epitaxial Planar Silicon Transistors
2SC4522
High-Speed Switching Applications
Features
· Adoption of FBET, MBIT process.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
Package Dimensions
unit:mm
2045B
[2SC4522]
6.5
5.0
4
2.3
0.5
unit:mm
2044B
0.85
0.7
0.6
123
2.3 2.3
1.2
1 : Base
0.5 2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
[2SC4522]
6.5 2.3
5.0 0.5
4
0.85
1
0.6
2
3
2.3 2.3
0.5
1.2
0~0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11299HA (KT)/7130MH/7059MO, TS No.3141–1/4

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