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PDF HY62256A Data sheet ( Hoja de datos )
| Número de pieza | HY62256A | |
| Descripción | 32Kx8bit CMOS SRAM | |
| Fabricantes | Hynix Semiconductor | |
| Logotipo |  |
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Data Sheet-sram/62256ald1
http://www.hea.com/hean2/sram/62256ald1.htm
HY62256A-(I) Series
32Kx8bit CMOS SRAM
Description
The
Features
· Fully static operation and
·HY62256A/HY62256A-I
is a high-speed, low
Tri-state outputs
TTL compatible inputs
·power and 32,786 x 8-bits
CMOS Static Random
and outputs
Low power consumption
Access Memory
-2.0V(min.) data
fabricated using
Hyundai's high
· retention
Standard pin
performance CMOS
configuration
process technology. The
-28 pin 600 mil PDIP
HY62256A/HY62256A-I -28 pin 330 mil SOP
has a data retention mode -28 pin 8x13.4 mm
that guarantees data to
TSOP-1
remain valid at the
(standard and reversed)
minimum power supply
voltage of 2.0 volt. Using
the CMOS technology,
supply voltages from 2.0
to 5.5 volt has little effect
on supply current in the
data retention mode. The
HY62256A/HY62256A-I
is suitable for use in low
voltage operation and
battery back-up
application.
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-sram/62256ala1
http://www.hea.com/hean2/sram/62256ala1.htm
HYUNDAI ELECTRONICS AMERICA
HY62256A-(I) Series
32Kx8bit CMOS SRAM
RATINGS INFORMATION
ABSOLUTE MAXIMUM RATING (1)
Symbol
Parameter
Rating Unit
Remark
VCC VIN
VOUT
Power Supply Input/Output
Voltage
-0.5 to 7.0
V
0 to 70 °C
HY62256A
TA Operating Temperature
-40 to 85 °C
HY62256A-I
TSTG
Storage Temperature
-65 to 150 °C
PD
Power Dissipation
1.0 W
IOUT
Data OutPut Current
50
mA
TSOLDER
Lead Soldering Temperature
& Time
260 /10
°C / sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is stress rating only and the
functional operation of the device under these or any other conditions above
those indicated in the operation of this specification is not implied. Exposure to
the absolute maximum rating conditions for extended period may affect
reliability.
RECOMMENDED DC OPERATING CONDITIONS
TA=0°C to 70°C / TA= -40°C to 85°C (E.T.)
Symbol
Parameter
Min Typ Max
VCC Power Supply Voltage
4.5 5.0 5.5
VIH Input High Voltage
2.2 - VCC+0.5
VIL Input Low Voltage
-0.5(1) -
0.8
Note
1. VIL = -3.0V for pulse width less than 30ns
Unit
V
V
V
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-sram/62256alt1
http://www.hea.com/hean2/sram/62256alt1.htm
DATA RETENTION CHARACTERISTIC
TA= 0°C to 70°C (normal) /-40°C to 85°C (E.T.)
Symbol
Parameter
Test Condition Min Typ Max Unit
VDR Vcc for Data Re! ention
/CS >= Vcc-0.2V
Vss <= VIN <= 2
Vcc
-- V
ICCDR
Data
Retention
Current
HY62256A
HY62256A-1
Vcc = 3.0V L -
/CS >= Vcc
-0.2V
LL -
Vss <= VIN
<= Vcc
L-
1 50 uA
1 15(2) uA
1 50 uA
tCDR
tR
Chip Disable to Data Retention
Time
See Data
Retention Timing
0
-
Operating Recovery Time
Diagram
tRC(3) -
-
-
ns
ns
Notes
1. Typical values are under the condition of TA = 25°C
2. 3uA max. at TA= 0°C to 40°C
3. tRC is read cycle time.
Data Retention Timing Diagram
RELIABILITY SPEC.
TEST MODE
TEST SPEC.
ESD
HBM
MM
>= 2000V
>= 250V
LATCH-UP
<= -100mA
>= 100mA
Features | Pins | Ratings | Timing | Package | Ordering
3101 North First Street, San Jose, CA 95134
Phone: 408-232-8000 URL: http://www.hea.com/
Copyright © 1997 Hyundai Electronics America.
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| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet HY62256A.PDF ] | |
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