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Numéro de référence | HY51V18163HGT-7 | ||
Description | 1M x 16Bit EDO DRAM | ||
Fabricant | Hynix Semiconductor | ||
Logo | |||
HY51V(S)18163HG/HGL
1M x 16Bit EDO DRAM
PRELIMINARY
DESCRIPTION
The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit.
HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utiliz-
ing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out Page-
Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)18163HG/HGL to be
packaged in standard 400mil 42pin SOJ and 44(50) pin TSOP-II. The package size provides high system
bit densities and is compatible with widely available automated testing and insertion equipment.
FEATURES
• Extended Data Out Mode capability
• Read-modify-write capability
• Multi-bit parallel test capability
• TTL(3.3V) compatible inputs and outputs
• /RAS only, CAS-before-/RAS, Hidden and self
refresh(L-version) capability
• Fast access time and cycle time
• JEDEC standard pinout
• 42pin plastic SOJ / 44(50)pin TSOP-II (400mil)
• Single power supply of 3.3V +/- 0.3V
• Battery back up operation(L-version)
• 2CAS byte control
Part No
HY51V(S)18163HG/HGL-5
HY51V(S)18163HG/HGL-6
HY51V(S)18163HG/HGL-7
tRAC
50ns
60ns
70ns
tCAC
13ns
15ns
18ns
tRC
84ns
104ns
124ns
tHPC
20ns
25ns
30ns
• Power dissipation
Active
Standby
50ns
60ns
70ns
684mW
612mW
540mW
7.2mW(CMOS level Max)
0.83mW (L-version : Max)
ORDERING INFORMATION
• Refresh cycle
Part No
HY51V18163HG
HY51V18163HGL
Ref Normal L-part
1K 16ms
1K 128ms
Part Number
HY51V(S)18163HGJ/HG(L)J-5
HY51V(S)18163HGJ/HG(L)J-6
HY51V(S)18163HGJ/HG(L)J-7
HY51V(S)18163HGT/HG(L)T-5
HY51V(S)18163HGT/HG(L)T-6
HY51V(S)18163HGT/HG(L)T-7
(S) : Self refresh,
(L) : Low power
Access Time
50ns
60ns
70ns
50ns
60ns
70ns
Package
400mil 42pin SOJ
400mil 44(50)pin TSOP-II
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.0.1/Apr.01
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Pages | Pages 12 | ||
Télécharger | [ HY51V18163HGT-7 ] |
No | Description détaillée | Fabricant |
HY51V18163HGT-5 | 1M x 16Bit EDO DRAM | Hynix Semiconductor |
HY51V18163HGT-6 | 1M x 16Bit EDO DRAM | Hynix Semiconductor |
HY51V18163HGT-7 | 1M x 16Bit EDO DRAM | Hynix Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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