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EIC discrete Semiconductors - HIGH VOLTAGE RECTIFIER DIODES

Numéro de référence HVR516
Description HIGH VOLTAGE RECTIFIER DIODES
Fabricant EIC discrete Semiconductors 
Logo EIC discrete Semiconductors 





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HVR516 fiche technique
HVR512 - HVR520
PRV : 1200 - 2000 Volts
Io : 5.0 Amperes
HIGH VOLTAGE
RECTIFIER DIODES
DO-201AD
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
0.21 (5.33)
0.19 (4.82)
1.00 (25.4)
MIN.
0.375 (9.52)
0.285 (7.24)
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.21 grams
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL HVR512 HVR514 HVR516 HVR518 HVR520
Maximum Repetitive Peak Reverse Voltage
VRRM
1200
1400
1600
1800
2000
Maximum RMS Voltage
VRMS
840
980
1120
1260
1400
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 50°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 5.0 Amps.
Maximum DC Reverse Current Ta = 25°C
at Rated DC Blocking Voltage Ta = 100°C
VDC
IF(AV)
IFSM
VF
IR
IR(H)
1200
1400
1600
5.0
200
2.2
10
100
1800
2000
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Junction Temperature Range
Cj
RθJA
TJ
36
26
- 40 to + 150
Storage Temperature Range
TSTG
- 40 to + 150
UNIT
Volts
Volts
Volts
Amps.
Amps.
Volts
µA
µA
pF
°C/W
°C
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
UPDATE : AUGUST 1, 1998

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