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EIC discrete Semiconductors - HIGH VOLTAGE RECTIFIER DIODES

Numéro de référence HVR125
Description HIGH VOLTAGE RECTIFIER DIODES
Fabricant EIC discrete Semiconductors 
Logo EIC discrete Semiconductors 





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HVR125 fiche technique
HVR125 - HVR180
HIGH VOLTAGE
RECTIFIER DIODES
PRV : 2500 - 8000 Volts
Io : 0.5 Ampere
DO - 41
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 50°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.0 Amp.
Maximum DC Reverse Current Ta = 25°C
at Rated DC Blocking Voltage Ta = 100°C
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
HVR
125
2500
HVR
130
3000
HVR
140
4000
HVR
150
5000
HVR
160
6000
HVR
170
7000
HVR
180
8000
UNIT
Volts
VRMS 1750 2100 2800 3500 4200 4900 5600 Volts
VDC 2500 3000 4000 5000 6000 7000 8000 Volts
IF(AV)
0.5 Amp.
IFSM
VF
IR
IR(H)
TJ
TSTG
3.3
30
5.0
5.0
50
- 40 to + 150
- 40 to + 150
8.0
Amps.
Volts
µA
µA
°C
°C
UPDATE : JUNE 16, 1998

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