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PDF 5082-2303 Data sheet ( Hoja de datos )
| Número de pieza | 5082-2303 | |
| Descripción | Schottky Barrier Diodes for General Purpose Applications | |
| Fabricantes | Agilent(Hewlett-Packard) | |
| Logotipo | .gif "Agilent(Hewlett-Packard)"){kind=logo} |
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Schottky Barrier Diodes for
General Purpose Applications
Technical Data
1N5711
1N5712
5082-2300 Series
5082-2800 Series
5082-2900
Features
• Low Turn-On Voltage
As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage
Up to 70 V
• Matched Characteristics
Available
Description/Applications
The 1N5711, 1N5712, 5082-2800/
10/11 are passivated Schottky
barrier diodes which use a
patented “guard ring” design to
achieve a high breakdown
voltage. Packaged in a low cost
glass package, they are well suited
for high level detecting, mixing,
switching, gating, log or A-D
converting, video detecting,
frequency discriminating,
sampling, and wave shaping.
The 5082-2835 is a passivated
Schottky diode in a low cost glass
package. It is optimized for low
turn-on voltage. The 5082-2835 is
particularly well suited for the
UHF mixing needs of the CATV
marketplace.
The 5082-2300 Series and
5082-2900 devices are unpas-
sivated Schottky diodes in a glass
package. These diodes have
extremely low 1/f noise and are
ideal for low noise mixing, and
high sensitivity detecting. They
are particularly well suited for use
in Doppler or narrow band video
receivers.
Outline 15
0.41 (.016)
0.36 (.014)
1.93 (.076)
1.73 (.068)
CATHODE
25.4 (1.00)
MIN.
4.32 (.170)
3.81 (.150)
25.4 (1.00)
MIN.
DIMENSIONS IN MILLIMETERS AND (INCHES).
Maximum Ratings
Junction Operating and Storage Temperature Range
5082-2303, -2900 .................................................................-60°C to +100°C
1N5711, 1N5712, 5082-2800/10/11 ....................................-65°C to +200°C
5082-2835 ............................................................................ -60°C to +150°C
DC Power Dissipation
(Measured in an infinite heat sink at TCASE = 25°C)
Derate linearly to zero at maximum rated temperature
5082-2303, -2900 .............................................................................. 100 mW
1N5711, 1N5712, 5082-2800/10/11 ................................................. 250 mW
5082-2835 ......................................................................................... 150 mW
Peak Inverse Voltage ................................................................................. VBR
1 page  
5
Typical Parameters, continued
100 100,000
100
10,000
150
10
100
1.0
0.1
0.01
0
+150°C
+100°C
+50°C
+25°C
0°C
–50°C
0.2 0.4 0.6 0.8 1.0 1.2
1000
100
10
50
25
TA = °C
1
0 5 10 15 20 25 30
VF - FORWARD VOLTAGE (V)
Figure 10. I-V Curve Showing Typical
Temperature Variation for the 5082-2811
Schottky Diode.
VR - REVERSE VOLTAGE (V)
Figure 11. (5082-2811) Typical Variation
of Reverse Current (IR) vs. Reverse
Voltage (VR) at Various Temperatures.
10
1.0
+150°C
+100°C
+50°C
0.1 +25°C
0°C
–50°C
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2
VF - FORWARD VOLTAGE (V)
Figure 12. I-V Curve Showing Typical
Temperature Variations for 5082-2835
Schottky Diode.
100,000
11.4
10,000
1000
100
10
+150°C
+125°C
+100°C
+75°C
+50°C
+25°C
1.2
1.0
0.8
5082-2810/2811
IN5712
0.6
5082-2835
0.4
0.2
1
01 23 4 5 6
VR - REVERSE VOLTAGE (V)
Figure 13. (5082-2835) Typical Variation
of Reverse Current (IR) vs. Reverse
Voltage (VR) at Various Temperatures.
0
0 2 4 6 8 10
VR - REVERSE VOLTAGE (V)
Figure 14. Typical Capacitance (CT) vs.
Reverse Voltage (VR).
1000
5082-2800, 1N5711
100 5082-2811
5082-2811
1N5712
10
5082-2835
1
0 2 4 6 8 10
IF - FORWARD CURRENT (mA)
Figure 15. Typical Dynamic Resistance
(RD) vs. Forward Current (IF).
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 5082-2303.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 5082-2300 | Schottky Barrier Diodes for General Purpose Applications | Agilent(Hewlett-Packard) |
| 5082-2301 | (5082-2xxx) Schottky Barrier Diode |  HP |
| 5082-2302 | (5082-2xxx) Schottky Barrier Diode | HP |
| 5082-2303 | Schottky Barrier Diodes for General Purpose Applications | Agilent(Hewlett-Packard) |
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