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Hitachi Semiconductor - Silicon N Channel MOS FET High Speed Power Switching

Numéro de référence 4AK27
Description Silicon N Channel MOS FET High Speed Power Switching
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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4AK27 fiche technique
4AK27
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) 0.15Ω, VGS = 10V, ID = 3.0A
4V gate drive devices.
High density mounting
Outline
SP-10
ADE-208-728 (Z)
1st. Edition
January 1999
3
D
4
5
D
6
7
D
8
9
D
1 2 3 4 5 6 7 8 9 10
2G G G G
1, 10.
Source
1S
S 10
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain

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