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Hitachi Semiconductor - Silicon N-Channel Power MOS FET Array

Numéro de référence 4AK26
Description Silicon N-Channel Power MOS FET Array
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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4AK26 fiche technique
4AK26
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance
RDS(on) 0.06 , VGS = 10 V, ID = 5 A
RDS(on) 0.075 , VGS = 4 V, ID = 5 A
Capable of 4 V gate drive
Low drive current
High speed switching
High density mounting
Suitable for motor driver and solenoid driver and lamp driver
Outline
SP-12
1
G
2
D5
G
4
D8
G
9
D 12
G
11
D
1 2 3 4 5 6 7 8 9101112
S 3 S 6 S 7 S 10
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source

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