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Numéro de référence | 4AK26 | ||
Description | Silicon N-Channel Power MOS FET Array | ||
Fabricant | Hitachi Semiconductor | ||
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1 Page
4AK26
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
RDS(on) ≤ 0.06 , VGS = 10 V, ID = 5 A
RDS(on) ≤ 0.075 , VGS = 4 V, ID = 5 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver and solenoid driver and lamp driver
Outline
SP-12
1
G
2
D5
G
4
D8
G
9
D 12
G
11
D
1 2 3 4 5 6 7 8 9101112
S 3 S 6 S 7 S 10
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source
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Pages | Pages 9 | ||
Télécharger | [ 4AK26 ] |
No | Description détaillée | Fabricant |
4AK20 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
4AK21 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
4AK22 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
4AK23 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
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