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Datasheet 4AK20-PDF.HTML Equivalent ( PDF )

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4AK Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
14AK15Silicon N-Channel Power MOS FET Array

4AK15 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.07 , VGS = 10 V, I D = 8 A R DS(on) ≤ 0.095 , VGS = 4 V, I D = 8 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounti
Hitachi Semiconductor
Hitachi Semiconductor		data
24AK16Silicon N-Channel Power MOS FET Array

4AK16 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.18 , VGS = 10 V, I D = 5 A R DS(on) ≤ 0.25 , VGS = 4 V, I D = 5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mountin
Hitachi Semiconductor
Hitachi Semiconductor		data
34AK17Silicon N-Channel Power MOS FET Array

4AK17 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.045 , VGS = 10 V, I D = 10 A R DS(on) ≤ 0.065 , VGS = 4 V, I D = 10 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mou
Hitachi Semiconductor
Hitachi Semiconductor		data
44AK18Silicon N-Channel Power MOS FET Array

4AK18 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.38 , VGS = 10 V, I D = 1 A R DS(on) ≤ 0.53 , VGS = 4 V, I D = 1 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mountin
Hitachi Semiconductor
Hitachi Semiconductor		data
54AK19Silicon N Channel MOS FET High Speed Power Switching

4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 (Z) 1st. Edition February 1999 Features • Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A • 4 V gate drive devices. • High density mounting Outline SP
Hitachi Semiconductor
Hitachi Semiconductor		data
64AK20Silicon N-Channel Power MOS FET Array

4AK20 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A R DS(on) 0.35 , VGS = 4 V, I D = 2.5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting �
Hitachi Semiconductor
Hitachi Semiconductor		data
74AK21Silicon N-Channel Power MOS FET Array

4AK21 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 A R DS(on) 0.12 , VGS = 4 V, I D = 4 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Su
Hitachi Semiconductor
Hitachi Semiconductor		data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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