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What is 5962R9676601QYC?

This electronic component, produced by the manufacturer "Intersil Corporation", performs the same function as "Radiation Hardened 256 x 8 CMOS RAM".


5962R9676601QYC Datasheet PDF - Intersil Corporation

Part Number 5962R9676601QYC
Description Radiation Hardened 256 x 8 CMOS RAM
Manufacturers Intersil Corporation　
Logo Intersil Corporation Logo　


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March 1996
HS-81C55RH,
HS-81C56RH
Radiation Hardened
256 x 8 CMOS RAM
Features
• Devices QML Qualified in Accordance with
MIL-PRF-38535
• Detailed Electrical and Screening Requirements are
Contained in SMD# 5962-95818 and Intersil’ QM Plan
• Radiation Hardened EPI-CMOS
- Parametrics Guaranteed 1 x 105 RAD(Si)
- Transient Upset > 1 x 108 RAD(Si)/s
- Latch-Up Free > 1 x 1012 RAD(Si)/s
• Electrically Equivalent to Sandia SA 3001
• Pin Compatible with Intel 8155/56
• Bus Compatible with HS-80C85RH
• Single 5V Power Supply
• Low Standby Current 200µA Max
• Low Operating Current 2mA/MHz
• Completely Static Design
• Internal Address Latches
• Two Programmable 8-Bit I/O Ports
• One Programmable 6-Bit I/O Port
• Programmable 14-Bit Binary Counter/Timer
• Multiplexed Address and Data Bus
• Self Aligned Junction Isolated (SAJI) Process
• Military Temperature Range -55oC to +125oC
Description
The HS-81C55/56RH are radiation hardened RAM and I/O
chips fabricated using the Intersil radiation hardened Self-
Aligned Junction Isolated (SAJI) silicon gate technology.
Latch-up free operation is achieved by the use of epitaxial
starting material to eliminate the parasitic SCR effect seen in
conventional bulk CMOS devices.
The HS-81C55/56RH is intended for use with the
HS-80C85RH radiation hardened microprocessor system. The
RAM portion is designed as 2048 static cells organized as 256
x 8. A maximum post irradiation access time of 500ns allows
the HS-81C55/56RH to be used with the HS-80C85RH CPU
without any wait states. The HS-81C55RH requires an active
low chip enable while the HS-81C56RH requires an active high
chip enable. These chips are designed for operation utilizing a
single 5V power supply.
Functional Diagram
IO/M
AD0 - AD7
CE OR CE†
ALE
RD
WR
RESET
TIMER CLK
TIMER OUT
256 x 8
STATIC
RAM
PORT A
A 8 PA0 - PA7
PORT B
B 8 PB0 - PB7
TIMER
PORT C
C 8 PC0 - PC5
VDD (10V)
GND
†81C55RH = CE
81C56RH = CE
Ordering Information
PART NUMBER
5962R9XXXX01QRC
5962R9XXXX01VRC
5962R9XXXX01QXC
5962R9XXXX01VXC
5962R9XXXX02QRC
5962R9XXXX02VRC
5962R9XXXX02QXC
5962R9XXXX02VXC
HS1-81C55RH/Sample
HS9-81C55RH/Sample
HS1-81C56RH/Sample
HS9-81C56RH/Sample
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
+25oC
+25oC
SCREENING LEVEL
MIL-PRF-38535 Level Q
MIL-PRF-38535 Level V
MIL-PRF-38535 Level Q
MIL-PRF-38535 Level V
MIL-PRF-38535 Level Q
MIL-PRF-38535 Level V
MIL-PRF-38535 Level Q
MIL-PRF-38535 Level V
Sample
Sample
Sample
Sample
PACKAGE
40 Lead SBDIP
40 Lead SBDIP
42 Lead Ceramic Flatpack
42 Lead Ceramic Flatpack
40 Lead SBDIP
40 Lead SBDIP
42 Lead Ceramic Flatpack
42 Lead Ceramic Flatpack
40 Lead SBDIP
42 Lead Ceramic Flatpack
40 Lead SBDIP
42 Lead Ceramic Flatpack
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
Spec Number 518056
File Number 3039.1

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5962R9676601QYC equivalent
Specifications HS-81C55RH, HS-81C56RH
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETERS
GROUP A
SYMBOL CONDITIONS SUBGROUPS TEMPERATURE
LIMITS
MIN MAX UNITS
WRITE to Port Output
Port Input Setup Time
Port Input Hold Time
Strobe to Buffer Full
Strobe Width
READ to Buffer Empty
Strobe to INTR Off
READ to INTR Off
Port Setup Time to Strobe
Post Hold Time After Strobe
Strobe to Buffer Empty
WRITE to Buffer full
WRITE to INTR Off
TIMER-IN to TIMER OUT Low
TIMER-IN to TIMER-OUT High
Data Bus Enable from READ Control
TIMER-IN Low Time
TIMER-IN High Time
TWP
TPR
TRP
TSBF
TSS
TRBE
TSI
TRDI
TPSS
TPHS
TSBE
TWBF
TWI
TTL
TTH
TRDE
T1
T2
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4, 5
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4, 6
Notes 1, 4
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
-55oC ≤ TA ≤ +125oC
-55oC ≤ TA ≤ +125oC
-55oC ≤ TA ≤ +125oC
-55oC ≤ TA ≤ +125oC
-55oC ≤ TA ≤ +125oC
-55oC ≤ TA ≤ +125oC
-55oC ≤ TA ≤ +125oC
-55oC ≤ TA ≤ +125oC
-55oC ≤ TA ≤ +125oC
-55oC ≤ TA ≤ +125oC
-55oC ≤ TA ≤ +125oC
-55oC ≤ TA ≤ +125oC
-55oC ≤ TA ≤ +125oC
-55oC ≤ TA ≤ +125oC
-55oC ≤ TA ≤ +125oC
-55oC ≤ TA ≤ +125oC
-55oC ≤ TA ≤ +125oC
-55oC ≤ TA ≤ +125oC
-
50
15
-
150
-
-
100
100
-
-
-
-
-
120
40
115
300
-
-
300
-
300
300
360
-
-
300
300
340
300
300
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES:
1. All devices guaranteed at worst case limits and over radiation.
2. Operating supply current (IDDOP) is proportional to operating frequency.
3. Output timings are measured with purely capacitive load.
4. For design purposes the limits are given as shown. For compatibility with the 80C85RH microprocessor, the AC parameters are tested
as maximums.
5. Parameter tested as part of the functional test. No read and record data available.
6. At low temperature, T1 is measured down to 10ns. If the reading is less than 10ns, the parameter will read 10ns.
7. Read and Record data available on failing data only.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETERS
Input Capacitance
I/O Capacitance
Output Capacitance
Data Bus Float After
READ
Recovery Time Between
Controls
SYMBOL
CIN
CI/O
COUT
TRDF
CONDITIONS
VDD = Open, f = 1MHz, All measurements
referenced to device ground
VDD = Open, f = 1MHz, All measurements
referenced to device ground
VDD = Open, f = 1MHz, All measurements
referenced to device ground
VDD = 4.75V
TRV
VDD = 4.75V
TEMPERATURE MIN MAX UNITS
TA = +25oC
- 10 pF
TA = +25oC
- 12 pF
TA = +25oC
- 10 pF
-55oC, +25oC,
+125oC
-55oC, +25oC,
+125oC
10 100
- 220
ns
ns
NOTE: The parameters listed in Table 3 are controlled via design or process parameters and are not directly tested. These parameters are
characterized upon initial design release and upon design changes which would affect these characteristics.
Spec Number 518056
5


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Part NumberDescriptionMFRS
5962R9676601QYCThe function is Radiation Hardened 256 x 8 CMOS RAM. Intersil CorporationIntersil Corporation

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