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Vishay Telefunken - Silicon PIN Diodes

Numéro de référence BA479
Description Silicon PIN Diodes
Fabricant Vishay Telefunken 
Logo Vishay Telefunken 





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BA479 fiche technique
Silicon PIN Diodes
Features
D Wide frequency range 10 MHz to 1 GHz
BA479G.BA479S
Vishay Telefunken
Applications
Current controlled HF resistance in adjustable
attenuators
94 9367
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Type
Symbol
VR
IF
Tj
Tstg
Value
30
50
125
–55...+125
Unit
V
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=4mm, TL=constant
Symbol
RthJA
Value
350
Unit
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
Reverse current
Diode capacitance
Differential forward
resistance
IF=20mA
VR=30 V
f=100MHz, VR=0
f=100MHz, IF=1.5mA
Reverse impedance f=100MHz, VR=0
Minority carrier
lifetime
IF=10mA, IR=10mA
Type
BA479G
BA479S
Symbol
VF
IR
CD
rf
Min
zr 5
ztr 9
Typ Max Unit
1V
50 nA
0.5 pF
50 W
kW
kW
4 ms
Document Number 85527
Rev. 2, 01-Apr-99
www.vishay.de FaxBack +1-408-970-5600
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