DataSheetWiki


BA158 fiches techniques PDF

EIC discrete Semiconductors - FAST RECOVERY RECTIFIER DIODES

Numéro de référence BA158
Description FAST RECOVERY RECTIFIER DIODES
Fabricant EIC discrete Semiconductors 
Logo EIC discrete Semiconductors 





1 Page

No Preview Available !





BA158 fiche technique
BA157 - BA159
PRV : 400 - 1000 Volts
Io : 1.0 Ampere
FAST RECOVERY
RECTIFIER DIODES
DO - 41
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Peak Forward Surge Current,
Ta = 45 °C
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.0 Amp.
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
IR
IR(H)
Trr
CJ
TJ
TSTG
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
BA157
400
280
400
BA158
600
420
600
1.0
BA159
1000
700
1000
UNIT
V
V
V
A
35
1.3
5.0
100
150
20
- 65 to + 150
- 65 to + 150
250
A
V
µA
µA
ns
pf
°C
°C
Rev. 01 : Apr. 2, 2002

PagesPages 2
Télécharger [ BA158 ]


Fiche technique recommandé

No Description détaillée Fabricant
BA150GP (BA157GP - BA159GP) 1 Amp Glass Passivated Fast Recovery Rectifier Fagor
Fagor
BA15218 Dual high slew rate/ low noise operational amplifier ROHM Semiconductor
ROHM Semiconductor
BA15218F Dual high slew rate/ low noise operational amplifier ROHM Semiconductor
ROHM Semiconductor
BA15218N Dual high slew rate/ low noise operational amplifier ROHM Semiconductor
ROHM Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche