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BA12003B fiches techniques PDF

ROHM Semiconductor - High voltage/ high current Darlington transistor array

Numéro de référence BA12003B
Description High voltage/ high current Darlington transistor array
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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BA12003B fiche technique
Standard ICs
BA12001B / BA12003B / BA12003BF / BA12004B
High voltage, high current Darlington
transistor array
BA12001B / BA12003B / BA12003BF / BA12004B
The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor
arrays consisting of seven circuits of Darlington transistors.
Because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive
loads such as relay coils, attachments can be kept to a minimum.
With an output sustain voltage as high as 60V and an output current (sink current) of 500mA, this product is ideal for use
with various drivers and as an interface with other elements.
zApplications
Drivers for LEDs, lamps, relays and solenoids
Interface with other elements
zFeatures
1) High output current. (IOUT=500mA Max.)
2) High output sustain voltage. (VOUT=50V Max.)
3) Seven Darlington transistors built in.
4) Built-in surge-absorbing clamp diode.
(Note : Refer to the “Reference items when using in application.” )
zBlock diagram
IN1 1
IN2 2
IN3 3
IN4 4
IN5 5
IN6 6
IN7 7
GND 8
16 OUT1
15 OUT2
14 OUT3
13 OUT4
12 OUT5
11 OUT6
10 OUT7
9 COM

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