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Numéro de référence | EC21QS06 | ||
Description | SBD | ||
Fabricant | ETC | ||
Logo | |||
1 Page
2A Avg.
60 Volts SBD
EC21QS06
10
5
2
1
0.5
0.2
0
FORWARD CURRENT VS. VOLTAGE
EC21QS06
Tj=25°C
Tj=150°C
0.2 0.4 0.6 0.8
INSTANTANEOUS FORWARD VOLTAGE (V)
1.0
1.2
0° 180°
θ
CONDUCTION ANGLE
AVERAGE FORWARD POWER DISSIPATION
2.0
1.6
1.2
0.8
0.4
0
0
RECT 180°
HALF SINE WAVE
RECT 120°
RECT 60°
0.5 1.0 1.5 2.0 2.5
AVERAGE FORWARD CURRENT (A)
EC21QS06
D.C.
3.0 3.5
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
100
Tj= 150°C
EC21QS06
50
20
0
10 20 30 40 50 60
PEAK REVERSE VOLTAGE (V)
70
0° 180°
θ
0° 180°
θ
AVERAGE REVERSE POWER DISSIPATION
CONDUCTION ANGLE
AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE
CONDUCTION ANGLE
AVERAGE FORWARD CURRENT VS. LEAD TEMPERATURE
5
EC21QS06
D.C.
Alumina Substrate mounted(Land=2 2mm),VRM=60V
EC21QS06
3.5
VRM=60V
EC21QS06
2.4 D.C.
D.C.
4 RECT 300°
2.0
3.0
RECT 240°
3 1.6
RECT 180°
RECT 180°
1.2 RECT 120°
HALF SINE WAVE
2 RECT 60°
2.5
RECT 180°
HALF SINE WAVE
2.0
RECT 120°
1.5
RECT 60°
HALF SINE WAVE
0.8
1.0
1
0.4
0.5
0
0 10 20 30 40 50 60 70
REVERSE VOLTAGE (V)
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
0
0 25 50 75 100 125 150
LEAD TEMPERATURE (°C)
SURGE CURRENT RATINGS
f=50Hz,Half Sine Wave,Non-Repetitive,No Load
EC21QS06
40
30
20
10
0
0.02
0.02s
0.05
I FSM
0.1 0.2
TIME (s)
0.5 1 2
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE
500
Tj=25°C,Vm=20mVRMS, f=100kHz, Typical Value
EC21QS06
200
100
50
20
0.5
1
2
5 10 20
REVERSE VOLTAGE (V)
50 100
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Pages | Pages 1 | ||
Télécharger | [ EC21QS06 ] |
No | Description détaillée | Fabricant |
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EC21QS06 | SBD | ETC |
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TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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