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Intel Corporation - 3 Volt Intel StrataFlash Memory

Numéro de référence E28F128J3A-150
Description 3 Volt Intel StrataFlash Memory
Fabricant Intel Corporation 
Logo Intel Corporation 





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E28F128J3A-150 fiche technique
3 Volt Intel® StrataFlashMemory
28F128J3A, 28F640J3A, 28F320J3A (x8/x16)
Preliminary Datasheet
Product Features
s High-Density Symmetrically-Blocked
Architecture
128 128-Kbyte Erase Blocks (128 M)
64 128-Kbyte Erase Blocks (64 M)
32 128-Kbyte Erase Blocks (32 M)
s High Performance Interface Asynchronous
Page Mode Reads
110/25 ns Read Access Time (32 M)
120/25 ns Read Access Time (64 M)
150/25 ns Read Access Time (128 M)
s 2.7 V3.6 V VCC Operation
s 128-bit Protection Register
64-bit Unique Device Identifier
64-bit User Programmable OTP Cells
s Enhanced Data Protection Features
Absolute Protection with VPEN = GND
Flexible Block Locking
Block Erase/Program Lockout during
Power Transitions
s Packaging
56-Lead TSOP Package
64-Ball Intel® Easy BGA Package
s Cross-Compatible Command Support Intel
Basic Command Set
Common Flash Interface
Scalable Command Set
s 32-Byte Write Buffer
6 µs per Byte Effective Programming
Time
s 12.8M Total Min. Erase Cycles (128 Mbit)
6.4M Total Min. Erase Cycles (64 Mbit)
3.2M Total Min. Erase Cycles (32 Mbit)
100K Minimum Erase Cycles per Block
s Automation Suspend Options
Block Erase Suspend to Read
Block Erase Suspend to Program
Program Suspend to Read
s 0.25 µ Intel® StrataFlashMemory
Technology
Capitalizing on Intel’s 0.25 µ generation two-bit-per-cell technology, second generation Intel®
StrataFlashmemory products provide 2X the bits in 1X the space, with new features for mainstream
performance. Offered in 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, these devices bring
reliable, two-bit-per-cell storage technology to the flash market segment.
Benefits include: more density in less space, high-speed interface, lowest cost-per-bit NOR devices,
support for code and data storage, and easy migration to future devices.
Using the same NOR-based ETOXtechnology as Intels one-bit-per-cell products, Intel StrataFlash
memory devices take advantage of over one billion units of manufacturing experience since 1987. As a
result, Intel StrataFlash components are ideal for code and data applications where high density and low
cost are required. Examples include networking, telecommunications, digital set top boxes, audio
recording, and digital imaging.
By applying FlashFilememory family pinouts, Intel StrataFlash memory components allow easy design
migrations from existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation
Intel StrataFlash memory (28F640J5 and 28F320J5) devices.
Intel StrataFlash memory components deliver a new generation of forward-compatible software support.
By using the Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take
advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.
Manufactured on Intel® 0.25 micron ETOXVI process technology, Intel StrataFlash memory provides
the highest levels of quality and reliability.
Notice: This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
Order Number: 290667-008
April 2001

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