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Fairchild Semiconductor - 400V N-Channel MOSFET

Numéro de référence FQU6N40C
Description 400V N-Channel MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FQU6N40C fiche technique
FQD6N40C / FQU6N40C
400V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
electronic lamp ballasts based on half bridge topology.
Features
• 4.5A, 400V, RDS(on) = 1.0 @VGS = 10 V
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D!
D-PAK
G S FQD Series
GDS
I-PAK
FQU Series
G!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C)*
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQD6N40C / FQU6N40C
400
4.5
2.7
18
± 30
270
4.5
4.8
4.5
2.5
48
0.38
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient.*
RθJA
Thermal Resistance, Junction-to-Ambient.
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max Units
-- 2.6 °C/W
-- 50 °C/W
-- 110 °C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003

PagesPages 9
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