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PDF FQT2P25 Data sheet ( Hoja de datos )
| Número de pieza | FQT2P25 | |
| Descripción | 250V P-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQT2P25
250V P-Channel MOSFET
May 2001
QFET TM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.
Features
• -0.55A, -250V, RDS(on) = 4.0Ω @VGS = 10 V
• Low gate charge ( typical 6.5 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• Improved dv/dt capability
D
S
G SOT-223
FQT Series
G!
S
!
●
●
▶▲
●
!
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJA
Thermal Resistance, Junction-to-Ambient *
* When mounted on the minimum pad size recommended (PCB Mount)
FQT2P25
-250
-0.55
-0.35
-2.2
± 30
120
-0.55
0.25
-5.5
2.5
0.02
-55 to +150
300
Typ Max
-- 50
©2001 Fairchild Semiconductor Corporation
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
Rev. A, May 2001
1 page  
Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ as DUT
12V 200nF
300nF
-10V
Qg
VGS
VDS
Qgs Qgd
-3mA
DUT
Charge
-10V
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
Vin
td(on)
t on
tr
10%
DUT
VDS
90%
t off
td(off)
tf
-10V
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
DUT
EAS
=
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
t p Time
VDD
ID (t)
VDS (t)
IAS
BVDSS
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FQT2P25.PDF ] | |
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