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Numéro de référence | FQPF5N60 | ||
Description | 600V N-Channel MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
FQPF5N60
600V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
• 2.8A, 600V, RDS(on) = 2.0Ω @VGS = 10 V
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 9.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• TO-220F package isolation = 4.0kV (Note 6)
GD S
TO-220F
FQPF Series
D
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Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQPF5N60
600
2.8
1.77
11.2
± 30
300
2.8
4.0
4.5
40
0.32
-55 to +150
300
Typ Max
-- 3.13
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
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Pages | Pages 8 | ||
Télécharger | [ FQPF5N60 ] |
No | Description détaillée | Fabricant |
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