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PDF FQPF15P12 Data sheet ( Hoja de datos )
| Número de pieza | FQPF15P12 | |
| Descripción | 120V P-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQP15P12/FQPF15P12
120V P-Channel MOSFET
QFET®
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• -15A, -120V, RDS(on) = 0.2Ω @VGS = -10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 110 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
S
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
●
●
▶▲
●
!
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP15P12
FQPF15P12
-120
-15 -15 *
-10.6
-10.6 *
-60 -60 *
± 30
1157
-15
10
-5.0
100 41
0.67 0.27
-55 to +175
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP15P12
1.5
40
62.5
FQPF15P12
3.66
--
62.5
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
1 page  
Typical Characteristics (Continued)
100
1 0 -1
1 0 -2
D = 0.5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
sin g le p u lse
※ N otes :
1 . Z θ J C( t) = 1 .5 ℃ /W M a x .
2. D uty F actor, D = t /t
12
3 . T JM - T C = P D M * Z θ J C( t )
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
101
Figure 11-1. Transient Thermal Response Curve for FQP15P12
D =0.5
100
0.2
0.1
0.05
1 0 -1
0.02
0.01
single pulse
※ N otes :
1 . Z θ JC( t) = 3 .6 6 ℃ /W M a x .
2. D uty Factor, D =t /t
12
3 . T JM - T C = P D M * Z θ JC( t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u are W a ve P u lse D u ra tio n [se c]
101
Figure 11-2. Transient Thermal Response Curve for FQPF15P12
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FQPF15P12.PDF ] | |
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