FQPF12P10 Datasheet PDF - Fairchild Semiconductor
| Part Number | FQPF12P10 | |
| Description | 100V P-Channel MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
| Logo |  |
|
|
There is a preview and FQPF12P10 download ( pdf file ) link at the bottom of this page. Total 8 Pages | ||
Preview 1 page No Preview Available !
FQPF12P10
100V P-Channel MOSFET
QFET TM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• -8.2A, -100V, RDS(on) = 0.29Ω @VGS = -10 V
• Low gate charge ( typical 21 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
D
GD S
TO-220F
FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8! from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
S
FQPF12P10
-100
-8.2
-5.8
-32.8
± 30
370
-8.2
3.8
-6.0
38
0.25
-55 to +175
300
Typ Max
-- 3.95
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
|
| |
 
Gate Charge Test Circuit & Waveform
Same Type
50K%
as DUT
12V 200nF
300nF
VGS
-10V
Qg
VGS
VDS
Qgs Qgd
-3mA
DUT
Charge
Resistive Switching Test Circuit & Waveforms
-10V
VDS
VGS
RG
RL
VDD
DUT
td(on)
VGS
10%
t on
tr
VDS
90%
t off
td(off)
tf
-10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
L
VDS
EAS
=
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
t p Time
ID
RG
VDD
VDD
ID (t)
VDS (t)
DUT
IAS
BVDSS
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FQPF12P10 electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FQPF12P10.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| FQPF12P10 | The function is 100V P-Channel MOSFET. Fairchild Semiconductor | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
FQPF
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||