FQP13N06L Datasheet PDF - Fairchild Semiconductor
| Part Number | FQP13N06L | |
| Description | 60V LOGIC N-Channel MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
| Logo |  |
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There is a preview and FQP13N06L download ( pdf file ) link at the bottom of this page. Total 8 Pages | ||
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FQP13N06L
60V LOGIC N-Channel MOSFET
May 2001
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• 13.6A, 60V, RDS(on) = 0.11Ω @VGS = 10 V
• Low gate charge ( typical 4.8 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
GD S
TO-220
FQP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FQP13N06L
60
13.6
9.6
54.4
± 20
90
13.6
4.5
7.0
45
0.3
-55 to +175
300
Typ Max
-- 3.35
0.5 --
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
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Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
5V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
VDS
90%
5V
DUT
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS =
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
10V
tp
DUT
VDD VDS (t)
t p Time
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FQP13N06L electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FQP13N06L.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| FQP13N06 | The function is 60V N-Channel MOSFET. Fairchild Semiconductor | |
| FQP13N06L | The function is 60V LOGIC N-Channel MOSFET. Fairchild Semiconductor | |
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