DataSheetWiki


FQP10N60C fiches techniques PDF

Fairchild Semiconductor - 600V N-Channel MOSFET

Numéro de référence FQP10N60C
Description 600V N-Channel MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





1 Page

No Preview Available !





FQP10N60C fiche technique
November 2013
FQP10N60C / FQPF10N60C
N-Channel QFET® MOSFET
600 V, 9.5 A, 730 mΩ
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology. This advanced technology has
been especially tailored to mini-mize on-state resistance,
provide superior switching perfor-mance, and withstand high
energy pulse in the avalanche and commutation mode.
These devices are well suited for high effi-ciency switched
mode power supplies, active power factor correction,
electronic lamp ballasts based on half bridge topology.
Features
9.5 A, 600 V, RDS(on) = 730 m(Max.) @ VGS = 10 V,
ID = 4.75 A
• Low Gate Charge (Typ. 44 nC)
• Low Crss (Typ. 18 pF)
• 100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering,
1/8 from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
FQP10N60C FQPF10N60C
600
9.5 9.5 *
5.7 5.7 *
38 38 *
± 30
700
9.5
15.6
4.5
156 50
1.25 0.4
-55 to +150
300
FQP10N60C
0.8
0.5
62.5
FQPF10N60C
2.5
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQP10N60C / FQPF10N60C Rev C1
1
www.fairchildsemi.com

PagesPages 10
Télécharger [ FQP10N60C ]


Fiche technique recommandé

No Description détaillée Fabricant
FQP10N60 N-Channel MOSFET Oucan Semi
Oucan Semi
FQP10N60C 600V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor
FQP10N60CF N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche