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Datasheet FQNL1N50B-PDF.HTML Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
FQN Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | FQN1N50C | N-Channel QFET MOSFET FQN1N50C N-Channel MOSFET
FQN1N50C
N-Channel QFET MOSFET
500 V, 0.38 A, 6 Ω
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduc Fairchild Semiconductor mosfet | | |
2 | FQN1N60C | N-Channel QFET MOSFET FQN1N60C — N-Channel QFET® MOSFET
FQN1N60C
N-Channel QFET® MOSFET
600 V, 0.30 A, 11.5 Ω
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tail Fairchild Semiconductor mosfet | | |
3 | FQNL1N50B | 500V N-Channel MOSFET FQNL1N50B
March 2001
QFET
FQNL1N50B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state res Fairchild Semiconductor mosfet | | |
4 | FQNL2N50B | 500V N-Channel MOSFET FQNL2N50B
March 2001
QFET
FQNL2N50B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state res Fairchild Semiconductor mosfet | |
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