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PDF FQI27N25 Data sheet ( Hoja de datos )
| Número de pieza | FQI27N25 | |
| Descripción | 250V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQI27N25
N-Channel QFET® MOSFET
250 V, 25.5 A, 110 mΩ
November 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
• 25.5 A, 250 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V,
ID = 12.75 A
• Low Gate Charge (Typ. 50 nC)
• Low Crss (Typ. 45 pF)
• 100% Avalanche Tested
D
GDS
I2-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
FQI27N25TU
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Thermal Characteristics
Symbol
Parameter
RJC
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
FQI27N25TU
0.7
62.5
40
Unit
oC/W
©2008 Fairchild Semiconductor Corporation
FQI27N25 Rev. C1
1
www.fairchildsemi.com
1 page  
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
IG = co3nmsAt.
DUT
Charge
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
V1G0GVSS
tp
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2008 Fairchild Semiconductor Corporation
FQI27N25 Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FQI27N25.PDF ] | |
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