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PDF FQD2N100 Data sheet ( Hoja de datos )
| Número de pieza | FQD2N100 | |
| Descripción | 1000V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQD2N100 / FQU2N100
N-Channel QFET® MOSFET
1000 V, 1.6 A, 9 Ω
October 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
• 1.6 A, 1000 V, RDS(on) = 9 Ω (Max.)@ VGS = 10 V,
ID = 0.8 A
• Low Gate Charge ( Typ. 12 nC)
• Low Crss ( Typ. 5 pF)
• 100% Avalanche Tested
• RoHS Compliant
D
D
G
S
D-PAK
GDS
I-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQD2N100TM / FQU2N100TU
1000
1.6
1.0
6.4
± 30
160
1.6
5.0
5.5
2.5
50
0.4
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
RJC
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (* 1 in2 pad of 2 oz copper), Max.
FQD2N100TM
FQU2N100TU
2.5
110
50
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Unit
oC/W
©2004 Fairchild Semiconductor Corporation
FQD2N100 / FQU2N100 Rev. C0
1
www.fairchildsemi.com
1 page  
Figure 12. Gate Charge Test Circuit & Waveform
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
VGS
VDS
Qgs
IG = co3nmsAt.
DUT
Qg
Qgd
Charge
V10GVS
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
V1G0GVSS
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
©2004 Fairchild Semiconductor Corporation
FQD2N100 / FQU2N100 Rev. C0
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FQD2N100.PDF ] | |
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