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Numéro de référence | FQA6N70 | ||
Description | 700V N-Channel MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
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1 Page
FQA6N70
700V N-Channel MOSFET
December 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switch mode power supply.
Features
• 6.4A, 700V, RDS(on) = 1.5 Ω @ VGS = 10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 15 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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FQA Series
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Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
FQA6N70
700
6.4
4.05
25.6
± 30
600
6.4
15.2
4.5
152
1.22
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.82
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
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Pages | Pages 8 | ||
Télécharger | [ FQA6N70 ] |
No | Description détaillée | Fabricant |
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