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PDF FP4050 Data sheet ( Hoja de datos )
| Número de pieza | FP4050 | |
| Descripción | 2-WATT POWER PHEMT | |
| Fabricantes | Filtronic Compound Semiconductors | |
| Logotipo |  |
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PRELIMINARY DATA SHEET
FP4050
2-WATT POWER PHEMT
• FEATURES
♦ 48 dBm IP3 at 2 GHz
♦ 34 dBm P-1dB at 2 GHz
♦ 14 dB Power Gain at 2 GHz
DRAIN
BOND PAD
SOURCE
BOND PAD
(2X)
• DESCRIPTION AND APPLICATIONS
GATE
BOND PAD
The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.50 um by 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The FP4050 features Si3N4 passivation.
Typical applications include commercial and military high-performance power amplifiers, including
SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and
medium-haul digital radio transmitters. This device is also suitable as a power stage for WLAN and
ISM band spread spectrum applications.
• ELECTRICAL SPECIFICATIONS @ TAmbient = 2 2 ±3 °C
Parameter
Output Power @
1dB Compression
Power Gain @
1dB Compression
Saturated Drain-Source Current
Symbol
Test Conditions
Min Typ Max Units
P1dB f = 2 GHz; VDS = 8V; IDS = 50% IDSS 34 dBm
G1dB f = 2 GHz; VDS = 8V; IDS = 50% IDSS
14
dB
IDSS
VDS = 2V; VGS = 0V
950 1100 1300 mA
Maximum Drain-Source Current
Transconductance
Pinch-Off Voltage
Gate-Drain Breakdown
Voltage Magnitude
Gate-Source Breakdown
Voltage Magnitude
Gate-Source Leakage
Current Magnitude
Thermal Resistivity
IMAX
GM
VP
|VBDGD|
|VBDGS|
|IGSL|
QJC
VDS = 2V; VGS = 1V
VDS = 2 V; VGS = 0 V
VDS = 2 V; IDS = 10 mA
IGS = 20 mA
IGS = 20 mA
VGS = -5 V
2200
880
-1.2
12 15
mA
mS
V
V
12 15
V
0.2 mA
15 °C/W
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filtronicsolidstate.com
Revised: 10/04/00
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FP4050.PDF ] | |
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