DataSheetWiki


FP402 fiches techniques PDF

Sanyo Semicon Device - Very High-Speed Switching Applicaitons

Numéro de référence FP402
Description Very High-Speed Switching Applicaitons
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





1 Page

No Preview Available !





FP402 fiche technique
Ordering number:EN5048
FP402
N-Channel MOS Silicon FET
Very High-Speed
Switching Applicaitons
Features
· Low ON resistance.
· Very high-speed switching.
· Complex type with 2 low-voltage-drive N-channel
MOSFETs facilitating high-density mounting.
Package Dimensions
unit:mm
2102A
[FP402]
Electrical Connection
1:Gate
2:Drain
3:Source
4:Drain
5:Gate
6:Drain
7:Drain
1:Gate
2:Drain
3:Source
4:Drain
5:Gate
6:Drain
7:Drain
(Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25˚C
Conditions
PW10µs, duty cycle 1%
Tc=25˚C, 1 unit
Mounted on ceramic board (250mm2×0.8mm) 1 unit
Mounted on ceramic board (250mm2×0.8mm)
Parameter
D-S Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Marking:402
Symbol
Conditons
V(BR)DSS
IDSS
IGSS
VGS(off)
| Yfs |
RDS(on)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±12V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=500mA
ID=500mA, VGS=10V
ID=500mA, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=1A, VGS=0
SANYO:PCP5
(Bottom view)
Ratings
20
±15
1
4
2.0
0.8
1.1
150
–55 to +150
Unit
V
V
A
A
W
W
W
˚C
˚C
Ratings
min typ
20
0.8
0.6 1.0
350
550
50
45
15
8
10
30
20
1.0
max
100
±10
2.0
480
750
Unit
V
µA
µA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41095TS (KOTO) TA-0099 No.5048-1/3

PagesPages 3
Télécharger [ FP402 ]


Fiche technique recommandé

No Description détaillée Fabricant
FP401 Very High-Speed Switching Applications Sanyo Semicon Device
Sanyo Semicon Device
FP402 Very High-Speed Switching Applicaitons Sanyo Semicon Device
Sanyo Semicon Device
FP4050 2-WATT POWER PHEMT Filtronic Compound Semiconductors
Filtronic Compound Semiconductors
FP40R12KE3 IGBT POWER MODULE Eupec
Eupec

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche