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PDF FP212 Data sheet ( Hoja de datos )
| Número de pieza | FP212 | |
| Descripción | High-Voltage Driver Applications | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number:EN4497
FP212
PNP/NPN Epitaxial Planar Silicon Transistors
High-Voltage Driver Applications
Features
· Composite type with a PNP transistor and an NPN
transistor, in one package, facilitating high-density
mounting.
· The FP212 is composed of 2 chips, one being
equivalent to the 2SA1370 and the other the
2SC3467, placed in one package.
Package Dimensions
unit:mm
2097A
[FP212]
Electrical Connection
1:Base
2:Collector
3:Emitter Common
4:Collector
5:Base
6:Collector
7:Collector
(Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
1:Base
2:Collector
3:Emitter Common
4:Collector
5:Base
6:Collector
7:Collector
SANYO:PCP5
(Bottom view)
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Conditions
Mounted on ceramic board (250mm2×0.8mm) 1 unit
Mounted on ceramic board (250mm2×0.8mm)
Electrical Characteristics at Ta=25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Marking:212
Symbol
Conditons
ICBO
IEBO
hFE
fT
Cob
VCB=(–)150V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)30V, IC=(–)10mA
VCB=(–)30V, f=1MHz
Cre VCB=(–)30V, f=1MHz
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)20mA, IB=(–)2mA
IC=(–)20mA, IB=(–)2mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
Ratings
(–)200
(–)200
(–)5
(–)100
(–)200
(–)10
0.75
1.0
150
–55 to +150
Unit
V
V
V
mA
mA
mA
W
W
˚C
˚C
Ratings
min typ
60
150
(2.6)
1.7
(1.7)
1.2
(–)200
(–)200
(–)5
max
(–)100
(–)100
200
(–)0.6
(–)1.0
Unit
nA
nA
MHz
pF
pF
V
V
V
V
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/82494MT (KOTO) A8-9729 No.4497-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FP212.PDF ] | |
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