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PDF FP201 Data sheet ( Hoja de datos )
| Número de pieza | FP201 | |
| Descripción | High-Frequency Amp/ Differential Amp Applications | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number:EN4697
FP201
NPN Epitaxial Planar Silicon Composite Transistors
High-Frequency Amp,
Differential Amp Applications
Features
· Composite type with 2 transistors contained in the
PCP package currently in use, improving the mount-
ing efficiency greatly.
· The FP201 is formed with two chips, being equiva-
lent to the 2SC4504, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2107A
[FP201]
Electrical Connection
Specifications
1:Base (NPN TR)
2:Collector (NPN TR)
3:Emitter Common
4:Collector (NPN TR)
5:Base (NPN TR)
6:Collector (NPN TR)
7:Collector (NPN TR)
(Top view)
Absolute Maximum Ratings at Ta = 25˚C
1:Base (NPN TR)
2:Collector (NPN TR)
3:Emitter Common
4:Collector (NPN TR)
5:Base (NPN TR)
6:Collector (NPN TR)
7:Collector (NPN TR)
SANYO:PCP5
(Bottom view)
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PT
Tj
Tstg
Conditions
Mounted on ceramic board (250mm2×0.8mm) 1unit
Mounted on ceramic board (250mm2×0.8mm)
Ratings
30
20
3
300
600
0.75
1.0
150
–55 to +150
Unit
V
V
V
mA
mA
W
W
˚C
˚C
Electrical Characteristics at Ta=25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Base-to-Emitter Voltage Difference
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
Symbol
Conditons
ICBO VCB=20V, IE=0
IEBO VEB=2V, IC=0
hFE1 VCE=5V, IC=50mA
hFE2 VCE=5V, IC=300mA
hFE1(smal- VCE=5V, IC=50mA
l/large)
VBE(large- VCE=5V, IC=100mA
small
fT
Cob
Cre
VCE(sat)
VBE(sat)
VCE=5V, IC=50mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
IC=200mA, IB=20mA
IC=200mA, IB=20mA
Ratings
min typ
60
20
0.7 0.95
max
1.0
5.0
200
Unit
µA
µA
3.0 15 mV
2.2 GHz
2.9 pF
2.6 pF
0.2 0.5 V
0.9 1.2 V
Note:The specifications shown above are for each individual transistor.
However, the DC Current Gain Ratio and Base Emitter to Voltage Difference are for the paired transistors.
Marking:201
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41594HO (KOTO) BX-0511 No.4697-1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet FP201.PDF ] | |
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