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FP101 fiches techniques PDF

Sanyo Semicon Device - DC-DC Converter Applications

Numéro de référence FP101
Description DC-DC Converter Applications
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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FP101 fiche technique
Ordering number:EN3960
FP101
PNP Epitaxial Planar Silicon Transistor/
Composite Schottky Barrier Diode
DC-DC Converter Applications
Features
· Composite type with a PNP transistor and a Shottky
barrier diode contained in one package, facilitating
high-density mounting.
· The FP101 is formed with 2chips, one being equiva-
lent to the 2SB1121 and the other the SB05-05CP,
placed in one package.
Package Dimensions
unit:mm
2088A
[FP101]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
VRRM
VRSM
IO
IFSM
Tj
Tstg
Marking:101
Electrical Connection
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector, Cathode)
(Top view)
Conditions
Mounted on ceramic board (250mm2×0.8mm)
50Hz sine wave, 1cycle
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector,
Cathode)
SANYO:PCP4
(Bottom view)
Ratings
Unit
–30
–25
–6
–2
–5
–400
1.3
150
V
V
V
A
A
mA
W
˚C
50 V
55 V
500 mA
5
–55 to +125
–55 to +125
A
˚C
˚C
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/62094MT (KOTO) AX-8060 No.3960-1/4

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