PDF FMS7G20US60 Data sheet ( Hoja de datos )

Número de pieza	FMS7G20US60
Descripción	Compact & Complex Module
Fabricantes	Fairchild Semiconductor
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No Preview Available ! FMS7G20US60 Compact & Complex Module IGBT General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control and general inverters where short-circuit ruggedness is required. Features • Short Circuit rated 10us @ TC = 100°C, VGE = 15V • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 20A • High Input Impedance • Built in Brake & 3 Phase Rectifier Circuit • Fast & Soft Anti-Parallel FWD • Built-in NTC Thermistor Application • AC & DC Motor Controls • General Purpose Inverters • Robotics • Servo Controls Package Code : 25PM-AA 45 21 19 17 22 25 20 18 16 23 13 14 15 24 1 32 8 7 6 9 10 NTC 11 12 Internal Circuit Diagram Absolute Maximum Ratings TC = 25°C unless otherwise noted Inverter & Brake Converter Symbol VCES VGES IC ICM (1) IF IFM PD TSC VRRM IO IFSM I2t TJ Common TSTG VISO Mounting Torque Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current @ TC = 80°C Diode Continuous Forward Current @ TC = 80°C Diode Maximum Forward Current Maximum Power Dissipation Short Circuit Withstand Time Repetitive Peak Reverse Voltage @ TC = 25°C @ TC = 100°C Average Output Rectified Current Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive Energy pulse @ 1Cycle at 60Hz Operating Junction Temperature Storage Temperature Range Isolation Voltage @ AC 1minute Mounting part Screw @ M4 FMS7G20US60 600 ± 20 20 40 20 40 89 10 1600 20 200 164 -40 to +150 -40 to +125 2500 2.0 Units V V A A A A W us V A A A2s °C °C V N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2003 Fairchild Semiconductor Corporation FMS7G20US60 Rev. A 1 page 3000 2 7 0 0 Cie s 2400 2100 C oes 1800 Common Emitter VGE = 0 V, f = 1 MHz TC = 25 oC 1500 C re s 1200 900 600 300 0 0.1 1 1 0 C o ll e c t o r - E m itt e r V o lt a g e , V [ V ] CE Fig 7. Capacitance Characteristics 1000 Common Emitter VCC = 300V, VGE = ± 15V IC = 20A TC = 25℃ ━━ TC = 125℃ ------ 100 T o ff Tf 10 20 30 40 50 60 70 80 90 100 G ate R e sista n c e, R g [ ] Ω Fig 9. Turn-Off Characteristics vs. Gate Resistance 1000 Common Emitter VGE = ± 15V, RG = 10Ω TC = 25℃ ━━ TC = 125℃ ------ 100 Ton Tr 10 15 20 25 30 35 C o ll e c t o r C u rr e n t, I [ A ] C Fig 11. Turn-On Characteristics vs. Collector Current ©2003 Fairchild Semiconductor Corporation 40 1000 Common Emitter VCC = 300V, VGE = ± 15V IC = 20A TC = 25℃ ━━ TC = 125℃ ------ 100 Ton Tr 10 20 30 40 50 60 70 80 90 G ate R e sista n c e, R g [ ] Ω Fig 8. Turn-On Characteristics vs. Gate Resistance 100 1000 Common Emitter VCC = 300V, VGE = ± 15V IC = 20A TC = 25℃ ━━ TC = 125℃ ------ E o ff Eon E o ff 100 10 20 30 40 50 60 70 80 90 100 G ate R e sista n c e, R g [ ] Ω Fig 10. Switching Loss vs. Gate Resistance 1000 Common Emitter VGE = ± 15V, RG = 10Ω TC = 25℃ ━━ TC = 125℃ ------ T o ff 1 0 0 Tf 10 10 15 20 25 30 35 40 C o ll e c t o r C u r r e n t, I [ A ] C Fig 12. Turn-Off Characteristics vs. Collector Current FMS7G20US60 Rev. A 5 Page

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