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PDF FMMV2101 Data sheet ( Hoja de datos )
| Número de pieza | FMMV2101 | |
| Descripción | SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES | |
| Fabricantes | ETC | |
| Logotipo |  |
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SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODES
ISSUE 3 JANUARY 1996
7
PIN CONFIGURATION
PARTMARKING DETAILS
SEE TUNING CHARACTERISTICS
FMMV2101
to
FMMV2109
2
1
3
! SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Reverse Voltage
Forward Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VR
IF
Ptot
Tj:Tstg
VALUE
30
200
330
-55 to +150
UNIT
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
Reverse Breakdown
Voltage
VBR
30
Reverse current
Series Inductance
IR
LS
20
3.0
Diode Capacitance
TCC
Temperature Coefficient
Case Capacitance
CC
280 400
0.15
UNIT
V
CONDITIONS.
IR = 10µA
nA
nH
ppm/ °C
pF
VR = 25V
f=250MHz
Lead length≈1.5mm
VR = 4V, f=1MHz
Lead length≈1.5mm
f=1MHz
TUNING CHARACTERISTICS (at Tamb = 25°C).
Nominal Capacitance (pF) Q Figure of MERIT
Type No.
VR = 4V, f=1MHz
VR = 4V, f=50MHz
Min.
Nom.
Max.
FMMV2101 6.1 6.8 7.5
450
FMMV2103 9.0
10.0 11.0
400
FMMV2104 10.8 12.0 13.2
400
FMMV2105 13.5 15.0 16.5
400
FMMV2107 19.8 22.0 24.2
350
FMMV2108 24.3 27.0 29.7
300
FMMV2109 29.3 33.0 36.3
280
* SELECTED DEVICE RANGE OFFERED ONLY
Turning Ratio
C2 / C30
f=1MHz
Min. Max.
2.5 3.3
2.6 3.3
2.6 3.3
2.6 3.3
2.7 3.3
2.7 3.3
2.7 3.3
Partmark
Detail
6R
6G
6H
6J
6L
6M
6N
3 - 185
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet FMMV2101.PDF ] | |
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| FMMV2101 | SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES | ETC |
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