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FMMV105G fiches techniques PDF

Zetex Semiconductors - SILICON PLANAR VARIABLE CAPACITANCE DIODE

Numéro de référence FMMV105G
Description SILICON PLANAR VARIABLE CAPACITANCE DIODE
Fabricant Zetex Semiconductors 
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FMMV105G fiche technique
SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODE
ISSUE 4 – JANUARY 1998
PIN CONFIGURATION
1
PARTMARKING DETAILS
FMMV105G – 4EZ
FMMV105G
2
1
3
3 SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
Ptot
Tj:Tstg
VALUE
330
-55 to +150
UNIT
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
VBR
30
V IR = 10µA
Reverse current
Series Inductance
Diode Capacitance
Temperature
Coefficient
IR
LS
TCC
10
3.0
280
nA VR = 28V
nH f=250MHz
ppm/ °C VR = 3V, f=1MHz
TUNING CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Diode Capacitance
Capacitance Ratio
Figure of MERIT
Cd 1.8
2.8
Cd / Cd
4.0
6.0
Q 250 350
pF
VR = 25V, f=1MHz
VR = 3V/25V, f=1MHz
VR = 3V, f=50MHz
Spice parameter data is available upon request for this device

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