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PDF FMMT6520 Data sheet ( Hoja de datos )
| Número de pieza | FMMT6520 | |
| Descripción | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 - NOVEMBER 1995
FEATURES
* 350 Volt VCEO
* Gain of 15 at IC=-100mA
7
APPLICATIONS
* SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS
FMMT6520
E
C
B
COMPLEMENTARY TYPE FMMT6517
PARTMARKING DETAIL 520
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-350 V
Collector-Emitter Voltage
VCEO
-350 V
Emitter-Base Voltage
VEBO
-5 V
Continuous Collector Current
IC -500 mA
Power Dissipation at Tamb= 25°C
Ptot
330 mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages
Cut-Off Currents
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
-350
-350
-5
VBE(sat)
VBE(on)
-50
-50
-0.3
-0.35
-0.5
-1.0
-0.75
-0.85
-0.90
-2.0
V
V
V
nA
nA
V
V
V
V
V
V
V
V
IC=-100µA, IE=0
IC=-1mA, IB=0*
IE=-10µA, IC=0
VCB=-250V, IE=0
VEB=-3V, IC=0
IC=-10mA, IB=-1mA*
IC=-20mA, IB=-2mA*
IC=-30mA, IB=-3mA*
IC=-50mA, IB=-5mA*
IC=-10mA, IB=-1mA*
IC=-20mA, IB=-2mA*
IC=-30mA, IB=-3mA*
IC=-100mA, VCE=-10V*
Static Forward Current
Transfer Ratio
hFE
20
30
30 200
20 200
15
IC=-1mA, VCE=-10V
IC=-10mA, VCE=-10V*
IC=-30mA, VCE=-10V*
IC=-50mA, VCE=-10V*
IC=-100mA, VCE=-10V*
Output Capacitance
Cobo
6 pF VCB=20V, f=1MHz
Transition Frequency
fT
50
MHz
IC=-10mA, VCE=-20V,
f=20MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3 - 172
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